PhotonExport supplies small quantity silicon and crystal wafers as detailed below.
Specifications:
Choose from the specifications listed below. We have no minimum order quantity.
- SSP: Single-Side Polished
- DSP: Double-Side Polished
- Thickenss form the Super-Thin 2 micron wafer up to thick wafer or ingo
- Doped P, Doped N or Undoped
- Select your standard orientations per example (100) or (110) or (111). Check with us for your specific orientation to ensure suitable results.
Available Diamaters
25.4 mm Si Wafer, 50.8 mm Si Wafer, 76.2 mm Si Wafer, 100 mm Si Wafer, 125 mm Si Wafer, 150 mm Si Wafer, 200 mm Si Wafer, 300 mm Si Wafer, 450 mm Si Wafer
Thermal Oxide Silicon Wafers
Thermal Oxide (SiO2)
Diameter ranging fom 25.4 mm to 300 mm.
Thickness available from 200 Angstroms (Å) to 15 µm
Silicon Nitride Wafers
Stoichiometric LPCVD (low-pressure chemical vapor deposition) Silicon Nitride wafer
PECVD (Plasma enhanced chemical vapor deposition) Silicon Nitride wafer (deposited at low temperatures)
Commonly supplied for your integrated photonics application.
Indium Gallium Arsenide Wafers
We supply single crystal InGaAs.
InGaAs is principally used for infrared detectors. Other applications include avalanche photo diodes, some of the fastest transistors, and triple-junction photovoltaics.
Commonly supplied for your integrated photonics application.
Indium Phosphide wafers
Diameters available: 2″ 3″
For your integrated photonics application
Crystal Wafers
Specifications
Choose your orientation
(100), (001), (111), (110) for cubic and tetragonal crystals
(0001), (1102), (1120), (1010) for hexagonal crystals
Other orientations are available with higher Miller index values or vicinal substrates.
Orientation accuracy: ± 0.5°, typical < 0.3°, or better on request
Choose your standard size:
5 mm x 5 mm, 10 mm x 10 mm, 10 mm x 5 mm, 15 mm x 15 mm
12,7 mm x 12,7 mm, 20 mm x 20 mm, 25 mm x 25 mm, ø1″, ø2″
Lateral tolerances: +0/-0.05 mm
Standard thickness:
0.5 mm, 1.0 mm, other thicknesses down to 0.1 mm on request
Vertical tolerance: +/- 0.05 mm, or better on request
Polishing:
One or both sides epi-polished (epitaxy ready polished)
Surface quality: scratch free under magnification 50x
Micro-Roughness (measured with interferometer microscope)
(lateral resolution: 0.65 µm, theoretical vertical resolution from 0.01 nm)
Roughness: ( λcut off =0.08 mm)
Ra: < 0.5 nm
Rq : < 1.0 nm
Rt : < 2.0 nm
Crystals in stock:
Aluminum, CeO2, GdScO3, LiF, PbSe, Tb-Dy-Fe (GMM), Al2O3 (sapphire ), CdS, GGG, MgAl2O4 (spinel), PbTe, W (Polycrystal), AlN, CdSe, Graphite, Mg, SrTiO3, WS2, Ag, CdTe （HgCdTe), InAs, MgF2, Nb:SrTiO3 , WSe2, Au, CdZnTe, InP, MgO, SrLaAlO4, WTe2, Au/Cr coated, SiO2/Si, CsI (TI), InSb, Mica Disks, SrLaGaO4, BaF2, DyScO3, KCl, Mo (Polycrystal), SiO2 ( quartz ), YAlO3 (YAP), BaTiO3, Diamond , KH2PO4, MoS2, SiC (4H, 6H, 3C), YAG , Bi2Se3, Diamond Epi Film on Si, KTN, MoSe2, SBN, YIG, Bi2Te3, Fe (SS-Poly), KTaO3, MoTe2, Si, YVO4, Bi4Ge3O12(BGO12), Fe2O3, LaAlO3, NaCl, Si-Ge, YSZ, Bi12GeO20(BGO20), Fe3O4, LaF3, NaBi(WO4)2, SOI, ZnO, BN (h), Ga2O3-ß, La3Ga5SiO14, NdCaAlO4, SOS, Black Phosphorus, GaAs, LiAlO2, Nickel ( single xtl), Ti (polycrystal), ZnS,CaF2, GaN, LiGaO2, NdGaO3, TiO2(Anatase), Zn, C ( single crystal), GaSe, LSAT, PBN, TiO2 (Rutile), ZnSe, CaCO3 (Calcite), GaP, Li, PET Film, Ta, ZnTe,Cu, GaTe, LiNbO3, PbWO4, TGG, Zr, Ce:Lu2SiO5, GaSb, LiTaO3, PMNT, TeO2, Zero Diffraction Plate, CdWO4, Ge, Lu2SiO5 : Ce, PbS, TbScO3, Two Dimensional Crystal.
If you can´t find it in our listing, ask us for more and custom solutions.
Ceramic Wafers:
