Tabla de técnicas de deposición al vacío

Tabla de técnicas de deposición al vacío adecuadas según el tipo de material

Encontrará información y otros datos para ayudarle a determinar la técnica de deposición al vacío más adecuada según el tipo de material.

A  B  C  D  E  G  H  I  K  L  M  N  O  P  R  S  T  U  V  Y  Z
  • E-Beam Evaporation = PVD using electron beam to generate vapor
  • Thermal Evaporation = PVD using electric heater
  • PDC = Pulsed DC (Direct Current) sputtering
  • RF = RF(Radio Frequency) sputtering
  • RF-R = reactive RF (Radio Frequency) sputter
  • DC = DC (Direct Current)  sputtering
  • DC-R = reactive DC (Direct Current) sputtering

 

Explora nuestra tabla de técnicas de deposición al vacío adecuadas según el tipo de material.

Choose your material and see which is the most suitable PVD techniques and the better adapted material accessories.
A  B  C  D  E  G  H  I  K  L  M  N  O  P  R  S  T  U  V  Y  Z
MaterialSymbolDensity g/cm3Melting
Point (Cº)		Sublimes/ 
Decompose		Acoustic Impedance 
Z Ratio		Temp.(Cº) 
for 10-8 Torr		Temp.(Cº) for
10-6 Torr		Temp.(Cº) for
10-4 Torr		E-Beam
performance		E-Beam
Liner 
Material		Thermal
Evap: 
Boat		Thermal 
Evap.
Coil		Thermal
Evap.
Basket		Thermal
Evap. 
Crucible		SputterNotes
A
AluminumAl2.7660-1.086778211010ExcellentFabmate®,
  Intermetallic		--WTiB2-BN, BNDCAlloys W/Mo/Ta.
  Flash evap or use BN crucible.
Aluminum AntimonideAlSb4.31080-----------RF-
Aluminum ArsenideAlAs3.71600----≈1300------RF-
Aluminum BromideAlBr32.6497----≈50--Mo--Gr--
Aluminum CarbideAl4C32.36≈1400D---≈800Fair-----RF-
Aluminum FluorideAlF32.881291S-410490700PoorGraphite,
  Fabmate®		Mo,
  W, Ta		--GrRF-
Aluminum NitrideAlN3.26>2200S**1.00--≈1750Fair-----RF-RDecomposes.
  Reactive evap in 10-3 T N2 with glow discharge.
Aluminum OxideAl2O33.972072-0.336--1550ExcellentFabmate®,
  Tungsten		W-W-RF-RSapphire
  excellent in E-beam; forms smooth, hard films.
Aluminum PhosphideAlP2.422-----------RF-
Aluminum, 1% CopperAl/Cu
  99/1 wt%		2.82640-**1.00---------DCWire feed &
  flash. Difficult from dual sources.
Aluminum, 1% SiliconAl/Si
  99/1 wt %		2.69640-**1.00--1010-----TiB2-BNRF,
  DC		Wire feed &
  flash. Difficult from dual sources.
AntimonySb6.68630S0.768279345425Poor-Mo***
  Ta***		Mo,
  Ta		Mo,
  Ta		BN,
  C, Al2O3		RF,
  DC		Evaporates well.
Antimony OxideSb2O35.2656S---≈300Good----BN,
  Al2O3		RF-RDecomposes on W.
Antimony SelenideSb2Se3-611-------Ta--CRFStoichiometry
  variable.
Antimony SulfideSb2S34.64550----≈200GoodMolybdenum,
  Tantalum		Mo,
  Ta		-Mo,
  Ta		Al2O3-No
  decomposition.
Antimony TellurideSb2Te36.5629-**1.00--600-----CRFDecomposes over
  750°C.
ArsenicAs5.73817S-107150210PoorFabmate®C--Al2O3-Sublimes rapidly
  at low temp.
Arsenic OxideAs2O33.74312-------------
Arsenic SelenideAs2Se34.75~360----------Al2O3,
  Q		RF-
Arsenic SulfideAs2S33.43300----≈400Fair-Mo--Al2O3,
  Q		RF-
Arsenic TellurideAs2Te36.5362-------Flash----See JVST. 1973,
  10:748
B
BariumBa3.51725-2.1545627735Fair-W,
  Ta, Mo		WWMetalsRFWets without
  alloying, reacts with ceramics.
Barium ChlorideBaCl23.92963----≈650--Ta,
  Mo		---RFPreheat gently
  to outgas.
Barium FluorideBaF24.890.355S0.793--≈700GoodMolybdenumMo---RF-
Barium OxideBaO5.721918----≈1300Poor----Al2O3RF,
  RF-R		Decomposes
  slightly.
Barium SulfideBaS4.251200----1.1--Mo---RF-
Barium TitanateBaTiO36.021625D0.464---------RFGives Ba.
  Co-evap and Sputter OK.
BerylliumBe1.851278--7108781ExcellentGraphite,
  Fabmate®		W,
  Ta		WWCDCWets W/Mo/Ta.
  Evaporates easily
Beryllium CarbideBe2C1.9>2100D------------
Beryllium ChlorideBeCl21.9405----≈150------RF-
Beryllium FluorideBeF21.99800S---≈200Good-------
Beryllium OxideBeO3.012530----1900Good---W-RF,
  RF-R		No decomposition
  from E-beam guns.
BismuthBi9.8271-0.79330410520ExcellentFabmate®,
  Graphite		W,
  Mo, Ta		WWAl2O3DCResistivity
  high. Low Melting Point materials not ideal for sputtering.
Bismuth FluorideBiF35.32727S---≈300-----GrRF-
Bismuth OxideBi2O38.55860-**1.00--≈1400Poor-----RF,
  RF-R		-
Bismuth SelenideBi2Se36.82710D**1.00--≈650Good----Gr,
  Q		RFCo-evap from 2
  sources or sputter.
Bismuth SulfideBi2S37.39685D----------RF-
Bismuth TellurideBi2Te37.7573-**1.00--≈600--W,
  Mo		--Gr,
  Q		RFCo-evap from 2
  sources or sputter.
Bismuth TitanateBi2Ti2O7-870D----------RFSputter or
  co-evap from 2 sources in 10-2 Torr O2.
BoronB2.342079-0.3891.2781.5481797ExcellentFabmate®,
  Graphite		C--CRFExplodes with
  rapid cooling. Forms carbide with container.
Boron CarbideB4C2.522350-**1.002.52.582650ExcellentFabmate®,
  Graphite		----RFSimilar to
  chromium.
Boron NitrideBN2.253000S---1600Poor-----RF,
  RF-R		Decomposes when
  sputtered. Reactive preferred.
Boron OxideB2O31.81≈450----≈1400GoodMolybdenumMo-----
Boron SulfideB2S31.55310----800-----GrRF-
C
CadmiumCd8.64321-0.68264120180Poor-W,
  Mo, Ta		-W,
  Mo, Ta		Al2O3,
  Q		DC,
  RF		Bad for vacuum
  systems. Low sticking coefficient.
Cadmium AntimonideCd3Sb26.92456-------------
Cadmium ArsenideCd3As26.21721----------QRF-
Cadmium BromideCdBr25.19567----≈300--------
Cadmium ChlorideCdCl24.05568----≈400--------
Cadmium FluorideCdF26.641.1----≈500------RF-
Cadmium IodideCdI25.67387----≈250--------
Cadmium OxideCdO6.95>1500D---≈530------RF-RDisproportionates.
Cadmium SelenideCdSe5.81>1350S**1.00--540GoodMolybdenum,
  Tantalum		Mo,
  Ta		--Al2O3,
  Q		RFEvaporates
  easily.
Cadmium SulfideCdS4.821750S1.02--550Fair-W,
  Mo, Ta		-WAl2O3,
  Q		RFSticking
  coefficient affected by substrate.
Cadmium TellurideCdTe5.851092-0.98--450--W,
  Mo, Ta		WW,
  Ta, Mo		-RFStoichiometry
  depends on substrate temp. n~2.6.
CalciumCa1.54839S2.62272357459Poor-WWWAl2O3,
  Q		-Corrodes in air.
Calcium FluorideCaF23.181423-0.775--≈1100--W,
  Mo, Ta		W,
  Mo, Ta		W,
  Mo, Ta		QRFRate control
  important. Preheat gently to outgas.
Calcium OxideCaO~3.32614----≈1700--W,
  Mo		--ZrO2RF-RForms volatile
  oxides with W/Mo.
Calcium SilicateCaSiO32.911540-----Good----QRF-
Calcium SulfideCaS2.52525D---1100--Mo---RFDecomposes.
Calcium TitanateCaTiO34.11975--149016001690Poor-----RFDisproportionates
  except in sputtering.
Calcium TungstateCaWO46.061200-----Good-W---RF-
CarbonC1.8–2.1≈3652S3.26165718672137ExcellentFabmate®,
  Graphite		----PDCE-beam
  preferred. Arc evaporation. Poor film adhesion.
CeriumCe~6.70798-**1.0097011501380Good-W,
  Ta		WW,
  Ta		Al2O3DC,
  RF		-
Cerium (III) OxideCe2O36.861692-----Fair-W----Alloys with
  source. Use 0.015"–0.020" W boat.
Cerium (IV) OxideCeO27.13≈2600-**1.00189020002310GoodTantalum,
  Graphite, Fabmate®		W---RF,
  RF-R		Very little
  decomposition.
Cerium FluorideCeF36.161460-**1.00--≈900GoodTungsten,
  Tantalum, Molybdenum		W,
  Mo, Ta		-Mo,
  Ta		-RFPreheat gently
  to outgas. n~1.7.
CesiumCs1.8828---162280-----Q--
Cesium BromideCsBr3.04636----≈400--W---RF-
Cesium ChlorideCsCl3.99645----≈500--W---RF-
Cesium FluorideCsF4.12682----≈500--W---RF-
Cesium HydroxideCsOH3.68272----550--------
Cesium IodideCsI4.51626----≈500--W--QRF-
ChioliteNa5Al3F142.9735----≈800--Mo,
  W		---RF-
ChromiumCr7.21.857S0.3058379771157GoodFabmate®,
  Graphite, Tungsten		Cr
  Plated W Rods		WWVitCDCFilms very
  adherent. High rates possible.
Chromium BorideCrB6.171950-2050-----------RF-
Chromium (II) BromideCrBr24.36842----550------RF-
Chromium CarbideCr3C26.681895----≈2000Fair-W---RF-
Chromium ChlorideCrCl22.88824----550--Fe---RF-
Chromium OxideCr2O35.212266-**1.00--≈2000Good-W,
  Mo		-W-RF,
  RF-R		Disproportionates
  to lower oxides; reoxidizes at 600°C in air.
Chromium SilicideCrSi25.51490-----------RF-
Chromium-Silicon MonoxideCr-SiO*-S-***Good-W-W-RFFlash evaporate.
Cobalt †Co8.91495-0.3438509901200ExcellentDirect
  in Hearth		W,
  Nb		-WAl2O3DCAlloys with
  W/Ta/Mo.
Cobalt BromideCoBr24.91678D---400------RF-
Cobalt ChlorideCoCl23.36724D---472------RF-
Cobalt OxideCoO6.451795-0.412---------DC-R,
  RF-R		Sputtering
  preferred.
CopperCu8.921083-0.4377278571017ExcellentGraphite,
  Molybdenum		MoWWAl2O3,
  Mo, Ta		DCAdhesion poor.
  Use interlayer (Cr). Evaporates using any source material.
Copper ChlorideCuCl4.14430----≈600------RF-
Copper OxideCu2O61235S**1.00--≈600GoodGraphite,
  Fabmate®, Tantalum		Ta--Al2O3DC-R,
  RF-R		-
Copper SulfideCu2S5.61100-------------
CryoliteNa3AlF62.91--102012601480ExcellentFabmate®,
  Tungsten		W,
  Mo, Ta		-W,
  Mo, Ta		VitCRFLarge chunks
  reduce spitting. Little decomposition.
D
DysprosiumDy8.551412-0.6625750900GoodDirect
  in Hearth		Ta---DC-
Dysprosium FluorideDyF3-1360S---≈800Good-Ta---RF-
Dysprosium OxideDy2O37.812340----≈1,400------RF,
  RF-R		Loses oxygen.
E
ErbiumEr9.071529S0.74650775930GoodTungsten,
  Tantalum		W,
  Ta		---DC-
Erbium FluorideErF37.821350----≈750--Mo---RFSee JVST. 1985;
  A3(6):2320.
Erbium OxideEr2O38.642350-**1.00--≈1600------RF,
  RF-R		Loses oxygen.
EuropiumEu5.24822S**1.00280360480Fair-W,
  Ta		--Al2O3DCLow Ta
  solubility.
Europium FluorideEuF26.51380----≈950--Mo---RF-
Europium OxideEu2O37.422350----≈1600Good-Ta,
  W		--ThO2RF,
  RF-R		Loses oxygen.
  Films clear and hard.
Europium SulfideEuS5.75------Good-----RF-
G
Gadolinium †Gd7.91313-0.677609001175ExcellentDirect
  in Hearth		Ta--Al2O3DCHigh Ta
  solubility
Gadolinium CarbideGdC2------1500-----CRFDecomposes under
  sputtering.
Gadolinium OxideGd2O37.412330-----Fair-----RF,
  RF-R		Loses oxygen.
GalliumGa5.930--619742907GoodFabmate®---Al2O3,
  Q		-Alloys with
  W/Ta/Mo. Use E-beam gun. Low Melting Point materials not ideal for
  sputtering.
Gallium AntimonideGaSb5.6710-----Fair-W,
  Ta		---RFFlash evaporate.
Gallium ArsenideGaAs5.31238-----GoodGraphite,
  Fabmate®		W,
  Ta		--CRFFlash evaporate.
Gallium NitrideGaN6.1800S---≈200-----Al2O3RF,
  RF-R		Evaporate Ga in
  10-3 Torr N2.
Gallium OxideGa2O36.441900-------W---RFLoses oxygen.
Gallium PhosphideGaP4.11540---770920--W,
  Ta		-WQRFDoes not
  decompose. Rate control important.
GermaniumGe5.35937-0.5168129571167ExcellentFabmate®,
  Graphite		W,
  C, Ta		--Q,
  Al2O3		DCExcellent films
  from E-beam.
Germanium (II) OxideGeO-700S---500-----QRF-
Germanium (III) OxideGeO26.241086----≈625GoodFabmate®,
  Tantalum, Molybdenum		Ta,
  Mo		-W,
  Mo		Q,
  Al2O3		RF-RSimilar to SiO;
  film predominantly GeO.
Germanium NitrideGe3N25.2450S---~650------RF-RSputtering
  preferred.
Germanium TellurideGeTe6.2725----381--W,
  Mo		-WQ,
  Al2O3		RF-
Glass, Schott® 8329—2.21.3-----Excellent-----RFEvaporable
  alkali glass. Melt in air before evaporating.
GoldAu19.321064-0.3818079471132ExcellentFabmate®,
  Tungsten		W***
  Mo***		--Al2O3,
  BN		DCFilms soft; not
  very adherent.
H
HafniumHf13.312227-0.36216022503090Good-----DC-
Hafnium BorideHfB210.53250-----------DC,
  RF		-
Hafnium CarbideHfC12.2≈3890S**1.00--≈2600------RF-
Hafnium NitrideHfN13.83305-**1.00---------RF,
  RF-R		-
Hafnium OxideHfO29.682758-**1.00--≈2500FairDirect
  in Hearth		----RF,
  RF-R		Film HfO.
Hafnium SilicideHfSi27.21750-----------RF-
HolmiumHo8.81474-0.58650770950Good-W,
  Ta		WW---
Holmium FluorideHoF37.681143----≈800-----QDC,
  RF		-
Holmium OxideHo2O38.412370-----------RF,
  RF-R		Loses oxygen.
I
Inconel®Ni/Cr/Fe8.51425-----GoodFabmate®,
  Tungsten		WWW-DCUse fine wire
  wrapped on W. Low rate required for smooth films.
IndiumIn7.3157-0.841487597742ExcellentFabmate®,
  Graphite, Molybdenum		W,
  Mo		-WGr,
  Al2O3		DCWets W and Cu.
  Use Mo liner. Low Melting Point materials not ideal for sputtering.
Indium (I) OxideIn2O6.99≈600S---650------RFDecomposes under
  sputtering.
Indium (III) OxideIn2O37.18850-**1.00--≈1200Good-W,
  Pt		--Al2O3--
Indium (I) SulfideIn2S5.87653----650-----GrRF-
Indium (II) SulfideInS5.18692S---650-----GrRF-
Indium (III) SulfideIn2S34.91050S---850-----GrRFFilm In2S.
Indium (II) TellurideInTe6.29696-------------
Indium (III) TellurideIn2Te35.78667-----------RFSputtering
  preferred; or co-evaporate from 2 sources; flash.
Indium AntimonideInSb5.8535-------W---RFDecomposes.
  Sputtering preferred; or co-evaporate.
Indium ArsenideInAs5.7943--780870970--W---RF-
Indium NitrideInN71200-------------
Indium PhosphideInP4.81070---630730--W,
  Ta		-W,
  Ta		GrRFDeposits are P
  rich.
Indium SelenideIn2Se35.67890-----------RFSputtering
  preferred; or co-evaporate from 2 sources; flash.
Indium Tin OxideIn2O3/SnO290/10
  wt %		-1.8S-----Fabmate®,
  Graphite		------
IridiumIr22.422410-0.129185020802380Fair-----DC-
Iron †Fe7.861535-0.3498589981180ExcellentFabmate®‡WWWAl2O3DCAttacks W. Films
  hard, smooth. Preheat gently to outgas.
Iron (II) OxideFeO5.71369-----Poor-----RF,
  RF-R		Decomposes;
  sputtering preferred.
Iron (III) OxideFe2O35.241565-**1.00---Good-W-W--Disproportionate
  to Fe3O4 at 1,530°C.
Iron Bromide372884.64684D---561-----FeRF-
Iron ChlorideFeCl23.16670S---300-----FeRF-
Iron IodideFeI25.32-----400-----FeRF-
Iron SulfideFeS4.741193D---------Al2O3RFDecomposes
K
KanthalFeCrAl7.1--------WWW-DC-
L
LanthanumLa6.15921-0.9299012121388ExcellentTungsten,
  Tantalum		W,
  Ta		--Al2O3RFFilms will burn
  in air if scraped.
Lanthanum BorideLaB62.612210D**1.00---Good-----RF-
Lanthanum BromideLaBr35.06783---------Ta-RFHygroscopic.
Lanthanum FluorideLaF3~6.01490S---900GoodTantalum,
  Molybdenum		Ta,
  Mo		-Ta-RFNo
  decomposition. n~1.6.
Lanthanum OxideLa2O36.512307-**1.00--1400GoodGraphite,
  Fabmate®, Tungsten		W,
  Ta		---RFLoses oxygen.
  n~1.73.
LeadPb11.34328-1.13342427497ExcellentFabmate®W,
  Mo		WW,
  Ta		Al2O3,
  Q		DC-
Lead BromidePbBr26.66373----≈300--------
Lead ChloridePbCl25.85501----≈325-----Al2O3RFLittle
  decomposition.
Lead FluoridePbF28.24855S---≈400--W,
  Mo		--BeORF-
Lead IodidePbI26.16402----≈500-----Q--
Lead OxidePbO9.53886----≈550-----Q,
  Al2O3		RF-RNo
  decomposition. n~2.6.
Lead SelenidePbSe8.11065S---≈500--W,
  Mo		-WGr,
  Al2O3		RF-
Lead StannatePbSnO38.11115--670780905Poor----Al2O3RFDisproportionates.
Lead SulfidePbS7.51114S---500--W-W,
  Mo		Q,
  Al2O3		RFLittle
  decomposition.
Lead TelluridePbTe8.16917-0.6517809101050--Mo,
  Pt, Ta		--Al2O3,
  Gr		RFDeposits are Ta
  rich. Sputtering preferred.
Lead TitanatePbTiO37.52--1.16-----Ta---RF-
LithiumLi0.53181-5.9227307407GoodTantalumTa--Al2O3-Metal reacts
  quickly in air.
Lithium BromideLiBr3.46550----≈500--Ni---RF-
Lithium ChlorideLiCl2.07605----400--Ni---RFPreheat gently
  to outgas.
Lithium FluorideLiF2.64845-0.77887510201180GoodTantalum,
  Tungsten, Molybdenum		Ni,
  Ta, Mo, W		--Al2O3RFRate control
  important for optical films. Preheat gently to outgas.
Lithium IodideLiI4.08449----400--Mo,
  W		---RF-
Lithium NiobateLiNbO3---0.463-----------
Lithium OxideLi2O2.01>1700----850------RF-
LutetiumLu9.841663----1300ExcellentDirect
  in Hearth		Ta--Al2O3RF,
  DC		-
Lutetium OxideLu2O39.42-----1400------RFDecomposes.
M
MagnesiumMg1.74649S1.61185247327GoodFabmate®,
  Graphite, Tungsten		W,
  Mo, Ta, Cb		WWAl2O3DCExtremely high
  rates possible.
Magnesium AluminateMgAl2O43.62135-----Good-----RFNatural spinel.
Magnesium BromideMgBr23.72700----≈450--Ni---RFDecomposes.
Magnesium ChlorideMgCl22.32714----400--Ni---RFDecomposes.
Magnesium FluorideMgF22.9–3.21261-0.637--1ExcellentFabmate®,
  Graphite, Molybdenum		Mo,
  Ta		--Al2O3RFSubstrate temp
  and rate control important. Reacts with W. Mo OK.
Magnesium IodideMgI24.43<637D---200------RF-
Magnesium OxideMgO3.582852-0.411--1300GoodFabmate®,
  Graphite		---C,
  Al2O3		RF,
  RF-R		Evaporates in
  10-3Torr O2 for stoichiometry.
ManganeseMn7.21244S0.377507572647GoodTungstenW,
  Ta, Mo		WWAl2O3DC-
Manganese (II) OxideMnO5.371945-------------
Manganese (III) OxideMn2O34.51080-0.467-----------
Manganese (IV) OxideMnO25.03535-----Poor-W-W-RF-RLoses oxygen at
  535°C.
Manganese BromideMnBr24.39-D---500------RF-
Manganese ChlorideMnCl22.98650----450------RF-
Manganese SulfideMnS3.99-D---1300--Mo---RFDecomposes.
MercuryHg13.55≈39---68-42-6--------
Mercury SulfideHgS8.1584S---250-----Al2O3RFDecomposes.
MolybdenumMo10.22617-0.257159218222117ExcellentFabmate®,
  Graphite		----DCFilms smooth,
  hard. Careful degas required.
Molybdenum BorideMoB27.122100-----Poor-----RF-
Molybdenum CarbideMo2C8.92687-**1.00---Fair-----RFEvaporation of
  Mo(CO)6 yields Mo2C.
Molybdenum SulfideMoS24.81185-**1.00--≈50------RF-
Molybdenum OxideMoO34.69795S**1.00--≈900--Mo-MoAl2O3,
  BN		RFSlight oxygen
  loss.
Molybdenum SilicideMoSi26.312050-**1.00-----W---RFDecomposes.
N
NeodymiumNd7.011021-**1.007318711062ExcellentTantalumTa--Al2O3DCLow W
  solubility.
Neodymium FluorideNdF36.51410----≈900GoodTungsten,
  Molybdenum		Mo,
  W		-Mo,
  Ta		Al2O3RFVery little
  decomposition.
Neodymium OxideNd2O37.24≈1900----≈1400GoodTantalum,
  Tungsten		Ta,
  W		--ThO2RF,
  RF-R		Loses oxygen;
  films clear. E-beam preferred.
Nichrome IV® †Ni/Cr8.51395-**1.008479871217ExcellentFabmate®Mo***, W***, Ta***WW, TaAl2O3DCAlloys with
  W/Ta/Mo.
Nickel †Ni8.91453-0.33192710721262ExcellentFabmate®‡W***--Al2O3DCAlloys with
  W/Ta/Mo. Smooth adherent films.
Nickel BromideNiBr25.1963S---362------RF-
Nickel ChlorideNiCl23.551001S---444------RF-
Nickel OxideNiO6.671984-**1.00--≈1470-----Al2O3RF-RDissociates on
  heating.
Nickel/Iron †Ni/Fe---**1.00----Fabmate®‡,------
Nimendium †Ni3%Mn8.81425-----------DC-
NiobiumNb8.572468-0.492172819772287ExcellentFabmate®----DCAttacks W
  source.
Niobium (II) OxideNbO7.3-----1100------RF-
Niobium (III) OxideNb2O37.51780-------W-W-RF,
  RF-R		-
Niobium (V) OxideNb2O54.471485-**1.00-----W-W-RF,
  RF-R		-
Niobium BorideNbB26.972900-----------RF-
Niobium CarbideNbC7.63500-**1.00---Fair-----RF-
Niobium NitrideNbN8.42573-**1.00---------RF,
  RF-R		Reactive.
  Evaporates Nb in 10-3 Torr N2.
Niobium TellurideNbTe27.6------------RFComposition
  variable.
Niobium-TinNb3Sn-------Excellent-----DCCo-evaporate
  from 2 sources.
O
OsmiumOs22.483045--217024302760Fair-----DC-
Osmium OxideOs2O3--D-----------Deposits Os in
  10-3Torr O2.
P
PalladiumPd12.021554S0.3578429921192ExcellentFabmate®,
  Graphite, Tungsten		W***WWAl2O3DCAlloys with
  refractory metals.
Palladium OxidePdO9.7870----575-----Al2O3RF-RDecomposes.
ParyleneC8H81.1300–400------------Vapor-depositable
  plastic.
Permalloy® †Ni/Fe/Mo/Mn8.71395-**1.0094710471307GoodFabmate®‡W--Al2O3DCFilm low in Ni.
PhosphorusP1.8244.1--327361402-----Al2O3-Material reacts
  violently in air.
Phosphorus NitrideP3N52.51------------RF,
  RF-R		-
PlatinumPt21.451772-0.245129214921747ExcellentFabmate®,
  Graphite		WWWCDCAlloys with
  metals. Films soft, poor adhesion.
Platinum OxidePtO210.2450-----------RF-RE-beam preferred
  for evaporation.
PlutoniumPu19.84641-------W-----
PoloniumPo9.4254--117170244-----Q--
PotassiumK0.8663--2360125--Mo--Q-Metal reacts
  rapidly in air. Preheat gently to outgas.
Potassium BromideKBr2.75734----≈450--Ta,
  Mo		--QRFPreheat gently
  to outgas.
Potassium ChlorideKCl1.98770S---510GoodTantalumTa,
  Ni		---RFPreheat gently
  to outgas.
Potassium FluorideKF2.48858----≈500-----QRFPreheat gently
  to outgas.
Potassium HydroxideKOH2.04360----≈400-------Preheat gently
  to outgas.
Potassium IodideKI3.13681----≈500--Ta---RFPreheat gently
  to outgas.
PraseodymiumPr6.77931-**1.008009501150Good-Ta---DC-
Praseodymium OxidePr2O37.07-D---1400Good----ThO2RF,
  RF-R		Loses oxygen.
PTFEPTFE2.9330-------W---RFBaffled source.
  Film structure doubtful.
R
RadiumRa5
  (?)		700--246320416--------
RheniumRe20.533180-0.15192822072571Poor-----DC-
Rhenium OxideReO3~7-D----------RFEvaporate Re in
  10-3 Torr O2.
RhodiumRh12.41966-0.21127714721707GoodFabmate®,
  Tungsten		WWWThO2,
  VitC		DCE-beam gun
  preferred.
RubidiumRb1.4839---337111-----Q--
Rubidium ChlorideRbCl2.09718----≈550-----QRF-
Rubidium IodideRbI3.55647----≈400-----QRF-
RutheniumRu12.32310-0.182178019902260Poor-----DC-
S
SamariumSm7.521074-0.89373460573Good-Ta--Al2O3DC-
Samarium OxideSm2O38.352350-----Good----ThO2RF,
  RF-R		Loses oxygen.
  Films smooth, clear.
Samarium SulfideSm2S35.731900-----Good-------
ScandiumSc2.991541-0.917148371002ExcellentTungsten,
  Molybdenum		W--Al2O3RFAlloys with Ta.
Scandium OxideSc2O33.862300----~400Fair-----RF,
  RF-R		-
SeleniumSe4.81217-0.86489125170GoodFabmate®,
  Tungsten, Molybdenum		W,
  Mo		W,
  Mo		W,
  Mo		Al2O3-Bad for vacuum
  systems. High V.P. Low Melting Point materials not ideal for sputtering.
SiliconSi2.321410-0.71299211471337FairFabmate®‡,
  Tantalum		----RFAlloys with W;
  use heavy W boat. SiO produced.
Silicon (II) OxideSiO2.13>1702S0.87--850FairFabmate®,
  Tungsten, Tantalum		TaWWTaRF,
  RF-R		For resistance
  evaporation, use baffle box and low rate.
Silicon (IV) OxideSiO2~2.651610-**1.00**1025*ExcellentFabmate®,
  Graphite, Tantalum		---Al2O3RFQuartz excellent
  in E-beam.
Silicon (N-type)Si
  (N-type)		2.321410-0.71299211471337FairFabmate®‡,
  Tantalum		----DC,
  RF		-
Silicon (P-type)Si
  (P-type)		2.321410-0.71299211471337FairFabmate®‡,
  Tantalum		----DC,
  RF		-
Silicon BorideSiB6-------Poor-----RF-
Silicon CarbideSiC3.22≈2700S,
  D		**1.00--1------RFSputtering
  preferred.
Silicon NitrideSi3N43.441900-**1.00--≈800------RF,
  RF-R		-
Silicon SelenideSiSe------550-----QRF-
Silicon SulfideSiS1.85940S---450-----QRF-
Silicon TellurideSiTe24.39-----550-----QRF-
SilverAg10.5962-0.5298479581105ExcellentFabmate®,
  Tungsten, Molybdenum, Tantalum		WMoTa,
  Mo		Al2O3,
  W		DC-
Silver BromideAgBr6.47432D---≈380--Ta--QRF-
Silver ChlorideAgCl5.56455----≈520--Mo-MoQRF-
Silver IodideAgI6.01558----≈500--Ta---RF-
SodiumNa0.9798--74124192--Ta--Q-Preheat gently
  to outgas. Metal reacts quickly in air.
Sodium BromideNaBr3.2747----≈400-----QRFPreheat gently
  to outgas.
Sodium ChlorideNaCl2.17801----530Good-Ta,
  W, Mo		--QRFCopper oven;
  little decomposition. Preheat gently to outgas.
Sodium CyanideNaCN-564----≈550------RFPreheat gently
  to outgas.
Sodium FluorideNaF2.56993----≈1000GoodTungsten,
  Fabmate®		Mo,
  Ta, W		--BeORFPreheat gently
  to outgas. No decomposition.
Sodium HydroxideNaOH2.13318----≈470-------Preheat gently
  to outgas.
SpinelMgAI2O48------Good-----RF-
StrontiumSr2.6769-**1.00239309403Poor-W,
  Ta, Mo		WWVitCRFWets but does
  not alloy with W/Ta/Mo. May react in air.
Strontium ChlorideSrCl23.05875-------------
Strontium FluorideSrF24.241473----≈1000-----Al2O3RF-
Strontium OxideSrO4.72430S---1500--Mo--Al2O3RFReacts with
  W/Mo.
Strontium SulfideSrS3.7>2000-------Mo---RFDecomposes.
Strontium TitanateSrTiO3---0.31-----------
SulfurS2.07113--131957Poor-W-WQ-Bad for vacuum
  systems.
Supermalloy® †Ni/Fe/Mo8.91410-----GoodFabmate®‡,----DCSputtering
  preferred; or co-evaporate from 2 sources-Ni/Fe and Mo.
T
TantalumTa16.62996-0.262196022402590ExcellentFabmate®,
  Graphite		----DCForms good
  films.
Tantalum BorideTaB211.15>3000-----------RF-
Tantalum CarbideTaC13.93880-**1.00--≈2500------RF-
Tantalum NitrideTaN16.33360-**1.00---------RF,
  RF-R		Evaporate Ta in
  10-3 Torr N2.
Tantalum PentoxideTa2O58.21872-0.3155017801920GoodFabmate®,
  Tantalum		TaWWVitCRF,
  RF-R		Slight
  decomposition. Evaporate Ta in 10-3 Torr O2.
Tantalum SulfideTaS2->1300-----------RF-
TechnetiumTc11.52200--157018002090--------
TelluriumTe6.25449-0.9157207277PoorFabmate®W,
  Ta		WW,
  Ta		Al2O3,
  Q		RFWets without
  alloying.
TerbiumTb8.231356-0.668009501150ExcellentGraphite,
  Fabmate®, Tantalum		Ta--Al2O3RF-
Terbium FluorideTbF3-1172----≈800------RF-
Terbium OxideTb2O37.872387----1300------RFPartially
  decomposes.
Terbium PeroxideTb4O7--D------Ta---RFFilms TbO.
ThalliumTl11.85304--280360470PoorFabmate®W,
  Ta		-WAl2O3,
  Q		DCWets freely.
Thallium BromideTlBr7.56480S---≈250--Ta--QRF-
Thallium ChlorideTlCl7430S---≈150--Ta--QRF-
Thallium IodideTlI7.1440S---≈250-----QRF-
Thallium OxideTl2O210.19717----350------RFDisproportionates
  at 850°C to Tl2O.
ThoriumTh11.71.75--143016601925ExcellentMolybdenum,
  Tantalum, Tungsten		W,
  Ta, Mo		WW---
Thorium BromideThBr45.67610S------Mo-----
Thorium CarbideThC28.962655----≈2300-----CRF-
Thorium FluorideThF46.32>900----≈750Fair-Mo-WVitCRF-
Thorium OxideThO29.863220----≈2100GoodTungsten----RF,
  RF-R		-
Thorium OxyfluorideThOF29.1900-------Mo,
  Ta		-----
Thorium SulfideThS27.31925-----------RFSputtering
  preferred; or co-evaporate from 2 sources.
ThuliumTm9.321545S-461554680Good-Ta--Al2O3DC-
Thulium OxideTm2O38.9-----1500------RFDecomposes.
TinSn7.28232-0.724682807997ExcellentFabmate®,
  Tantalum		MoWWAl2O3DCWets Mo low
  sputter power. Use Ta liner in E-beam guns. Low Melting Point materials not
  ideal for sputtering.
Tin OxideSnO26.951630S**1.00--≈1000Excellent-WWWQ,
  Al2O3		RF,
  RF-R		Films from W are
  oxygen deficient; oxidize in air.
Tin SelenideSnSe6.18861----≈400Good----QRF-
Tin SulfideSnS5.22882----≈450-----QRF-
Tin TellurideSnTe6.48780D---≈450-----QRF-
TitaniumTi4.51660-0.628106712351453ExcellentFabmate®W--TiCDCAlloys with
  W/Ta/Mo; evolves gas on first heating.
Titanium (II) OxideTiO4.931750-**1.00--≈1500GoodFabmate®,
  Tantalum		W,
  Mo		--VitCRFPreheat gently
  to outgas.
Titanium (III) OxideTi2O34.62130D----GoodFabmate®,
  Tantalum		W---RFDecomposes.
Titanium (IV) OxideTiO24.261830-0.4--≈1300FairFabmate®,
  Tantalum		W,
  Mo		-W-RF,
  RF-R		Suboxide, must
  be reoxidized to rutile. Ta reduces TiO2 to TiO and Ti.
Titanium BorideTiB24.52900-**1.00---Poor-----RF-
Titanium CarbideTiC4.933140-**1.00--≈2300------RF-
Titanium NitrideTiN5.222930-**1.00---GoodMolybdenumMo---RF,
  RF-R		Sputtering
  preferred. Decomposes with thermal evaporation.
TungstenW19.353410-0.163211724072757GoodDirect
  in Hearth		----DCForms volatile
  oxides. Films hard and adherent.
Tungsten BorideWB210.77≈2900-----Poor-----RF-
Tungsten CarbideWC17.152860-0.151148017202120ExcellentGraphite,
  Fabmate®		C---RF-
Tungsten DisulfideWS27.51250D**1.00---------RF-
Tungsten OxideWO37.161473S**1.00--980GoodTungstenW---RF-RPreheat gently
  to outgas. W reduces oxide slightly.
Tungsten SelenideWSe29------------RF-
Tungsten SilicideWSi29.4>900-**1.00---------RF-
Tungsten TellurideWTe29.49-----------QRF-
U
UraniumU19.051132--113213271582Good-Mo,
  W		WW--Films oxidize.
Uranium (II) SulfideUS10.87>2000-------------
Uranium (III) OxideU2O38.31300D------W-W-RF-RDisproportionates
  at 1,300°C to UO2.
Uranium (IV) OxideUO210.962878-------W-W-RFTa causes
  decomposition.
Uranium (IV) SulfideUS27.96>1100-------W---RFSlight
  decomposition.
Uranium CarbideUC211.282350----2100-----CRFDecomposes.
Uranium FluorideUF46.7960----300--Ni---RF-
Uranium PhosphideUP28.57-----1200--Ta---RFDecomposes.
V
VanadiumV5.961890-0.53116213321547ExcellentTungstenW,
  Mo		---DCWets Mo.
  E-beam-evaporated films preferred.
Vanadium (IV) OxideVO24.341967S---≈575------RF,
  RF-R		Sputtering
  preferred.
Vanadium (V) OxideV2O53.36690D**1.00--≈500-----QRF-
Vanadium BorideVB25.12400-----------RF-
Vanadium CarbideVC5.772810-**1.00--≈1800------RF-
Vanadium NitrideVN6.132320-----------RF,
  RF-R		-
Vanadium SilicideVSi24.421700-----------RF-
Y
YtterbiumYb6.96819S1.13520590690GoodTantalumTa-----
Ytterbium FluorideYbF3-1157----≈800-Tantalum,
  Molybdenum		Mo---RF-
Ytterbium OxideYb2O39.172346S**1.00--≈1500------RF,
  RF-R		Loses oxygen.
YttriumY4.471522-0.8358309731157ExcellentTungstenW,
  Ta		WWAl2O3RF,
  DC		High Ta
  solubility.
Yttrium Aluminum OxideY3Al5O12-1990-----Good--WW-RFFilms not
  ferroelectric.
Yttrium FluorideYF34.011387------Tantalum,
  Molybdenum		----RF-
Yttrium OxideY2O35.012410-**1.00--≈2000GoodFabmate®,
  Graphite, Tungsten		W--CRF,
  RF-R		Loses oxygen;
  films smooth and clear.
Z
ZincZn7.14420-0.514127177250ExcellentFabmate®,
  Graphite, Tungsten		Mo,
  W, Ta		WWAl2O3,
  Q		DCEvaporates well
  under wide range of conditions.
Zinc AntimonideZn3Sb26.33570-----------RF-
Zinc BromideZnBr24.2394----≈300--W--CRFDecomposes.
Zinc FluorideZnF24.95872----≈800--Ta--QRF-
Zinc NitrideZn3N26.22--------Mo---RFDecomposes.
Zinc OxideZnO5.611975-0.556--≈1800Fair-----RF-R-
Zinc SelenideZnSe5.42>1100-0.722--660-Tantalum,
  Molybdenum		Ta,
  W, Mo		W,
  Mo		W,
  Mo		QRFPreheat gently
  to outgas. Evaporates well.
Zinc SulfideZnS3.981700S0.775--≈800GoodTantalum,
  Molybdenum		Ta,
  Mo		---RFPreheat gently
  to outgas. Films partially decompose. n=2.356.
Zinc TellurideZnTe6.341239-0.77--~600--Mo,
  Ta		---RFPreheat gently
  to outgas.
ZirconiumZr6.491852-0.6147717021987Excellent-W---DCAlloys with W.
  Films oxidize readily.
Zirconium BorideZrB26.09≈3200-----Good-----RF-
Zirconium CarbideZrC6.733540-0.264--≈2500------RF-
Zirconium NitrideZrN7.092980-**1.00---------RF,
  RF-R		Reactively
  evaporate in 10-3Torr N2.
Zirconium OxideZrO25.89≈2700-**1.00--≈2200GoodGraphite,
  Tungsten		W---RF,
  RF-R		Films oxygen
  deficient, clear and hard.
Zirconium SilicateZrSiO44.562550-----------RF-
Zirconium SilicideZrSi24.881700-----------RF-

Symbols legend
† : Magnetic material (requires special sputter source)
‡:  One run only
* : Influenced by composition
** :The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally determined value.
*** Alumina coating is available

Thermal evaporation accessories materials
C = carbon, Gr = graphite, Q = quartz, VitC = vitreous carbon

Sublimes/Decompose
S = sublimes
D = decomposes

Effective Sputtering Techniques
PDC = Pulsed DC sputtering
RF = RF sputtering
RF-R = Reactive RF sputter
DC = DC sputtering
DC-R = reactive DC sputtering