FEATURES OF RTP – RAPID THERMAL PROCESSING
It is a manufacturing method which involves rapidly heating the materials to high temperatures to do a heat treatment in matter of seconds. Reaching these high temperatures in short time achieved by using high intensity lamps (e.g. tungsten halogen lamps). Thermocouples and pyrometers used for measuring the temperature of samples. After the heating, it is necessary to perfectly control the cooling for preventing dislocations and thermal shock.
Annealsys rapid thermal processing (RTP) furnaces can address various applications with an extended temperature range and vacuum capability. The infrared lamp furnaces can perform annealing up to 1450°C and for duration up to 1 hour at 1200°C.
The high temperature Zenith system can run process at 2000°C for 1 hour. Applications include Rapid Thermal Annealing (RTA) processes like ohmic contact annealing and implantation annealing as well as Rapid Thermal Chemical Vapor Deposition (RTCVD) of graphene or hexagonal Boron Nitride (h-BN).These versatile RTP systems can process samples from few mm² up to 200 mm diameter with manual loading or cassette to cassette robot handling for production, including customized solutions for processing compound semiconductor wafers with susceptors.
Dr Tuomo Suntola invented and patented the ALD method for industrial purposes in Finland in 1974 is a Member of Picosun board of Directors.
An industrial semiconductor manufacturing process that heats silicon wafers to temperatures in excess of 1,000°C. While the wafers are slowly cooled to avoid dislocations and wafer breakage due to thermal shock.