Silicon wafer
PhotonExport supplies small quantity silicon wafer and crystal as detailed below.
Specifications:
Choose from the specifications listed below. We have no minimum order quantity.
25.4 mm Si Wafer, 50.8 mm Si Wafer, 76.2 mm Si Wafer, 100 mm Si Wafer, 125 mm Si Wafer, 150 mm Si Wafer, 200 mm Si Wafer, 300 mm Si Wafer, 450 mm Si Wafer Thermal Oxide (SiO2) Diameter ranging fom 25.4 mm to 300 mm Thickness available from 200 Angstroms (Å) to 15 µm Stoichiometric LPCVD (low-pressure chemical vapor deposition) Silicon Nitride wafer PECVD (Plasma enhanced chemical vapor deposition) Silicon Nitride wafer (deposited at low temperatures) Commonly supplied for your integrated photonics application We supply single crystal InGaAs InGaAs is principally used for infrared detectors. Other applications include avalanche photo diodes, some of the fastest transistors, and photovoltaic triple-junction Commonly supplied for your integrated photonics application Diameters available: 2″, 3″ For your integrated photonics application Choose your orientation (100), (001), (111), (110) for cubic and tetragonal crystals (0001), (1102), (1120), (1010) for hexagonal crystals Other orientations are available with higher Miller index values or vicinal substrates Orientation accuracy : ± 0.5°, typical < 0.3°, or better on request Choose your standard size: 5 mm x 5 mm, 10 mm x 10 mm, 10 mm x 5 mm, 15 mm x 15 mm 12,7 mm x 12,7 mm, 20 mm x 20 mm, 25 mm x 25 mm, ø1″, ø2″ Lateral tolerances: +0/-0.05 mm Standard thickness: 0.5 mm, 1.0 mm, other thicknesses down to 0.1 mm on request Vertical tolerance: +/- 0.05 mm, or better on request Polishing: One or both sides epi-polished (epitaxy ready polished) Surface quality: scratch free under magnification 50x Micro-Roughness (measured with interferometer microscope) Aluminum, CeO2, GdScO3, LiF, PbSe, Tb-Dy-Fe (GMM), Al2O3 (sapphire), CdS, GGG, MgAl2O4 (spinel), PbTe, W (Polycrystal), AlN, CdSe, Graphite, Mg, SrTiO3, WS2, Ag, CdTe (HgCdTe), InAs, MgF2, Nb:SrTiO3, WSe2, Au, CdZnTe, InP, MgO, SrLaAlO4, WTe2, Au/Cr coated, SiO2/Si, CsI (TI), InSb, Mica Disks, SrLaGaO4, BaF2, DyScO3, KCl, Mo (Polycrystal), SiO2 (quartz), YAlO3 (YAP), BaTiO3, Diamond, KH2PO4, MoS2, SiC (4H, 6H, 3C), YAG, Bi2Se3, Diamond Epi Film on Si, KTN, MoSe2, SBN, YIG, Bi2Te3, Fe (SS-Poly), KTaO3, MoTe2, Si, YVO4, Bi4Ge3O12(BGO12), Fe2O3, LaAlO3, NaCl, Si-Ge, YSZ, Bi12GeO20(BGO20), Fe3O4, LaF3, NaBi(WO4)2, SOI, ZnO, BN (h), Ga2O3-ß, La3Ga5SiO14, NdCaAlO4, SOS, Black Phosphorus, GaAs, LiAlO2, Nickel (single xtl), Ti (polycrystal), ZnS, CaF2, GaN, LiGaO2, NdGaO3, TiO2(Anatase), Zn, C (single crystal), GaSe, LSAT, PBN, TiO2 (Rutile), ZnSe, CaCO3 (Calcite), GaP, Li, PET Film, Ta, ZnTe, Cu, GaTe, LiNbO3, PbWO4, TGG, Zr, Ce: Lu2SiO5, GaSb, LiTaO3, PMNT, TeO2, Zero Diffraction Plate, CdWO4, Ge, Lu2SiO5: Ce, PbS, TbScO3, Two Dimensional Crystal. If you can´t find it in our listing, ask us for more and custom solutions. PhotonExport provides Alumina substrate (Al2O3), Zirconia substrate (ZrO2) and Aluminum Nitride substrate (AlN). Al2O3 substrate has a very communused due to its excellent high mechanical strength and very high heat resistance. Properties includes a very small dieletcric loss which makes alumina substrates very good for high-
Available Diameters
Thermal Oxide Silicon Wafers
Silicon Nitride Wafers
Indium Gallium Arsenide Wafers
Indium Phosphide wafers
Crystal Wafers
Specifications
(lateral resolution : 0.65 µm, theoretical vertical resolution from 0.01 nm)
Roughness: ( λcut off =0.08 mm)
Ra: < 0.5 nm
Rq: < 1.0 nm
Rt: < 2.0 nmCrystals usually in stock:
Ceramic Wafers:
Description Al2O3 Wafer Type 1 Al2O3 Wafer Type 2 Al2O3 Wafer Type 3 Al2O3 Wafer Type 4
Purity (wt%) 0.96 99.6% 99.6% 99.9%
Density (g/cm3) > 3.75 3.88 3.87 3.92
Thermal conductivity (W/m. K) 24 34.7 35 35
Thermal Expansion (x10-6/oC) < 7.7 7~8.3 7~8.3 8.1
Dielectric Strength (Kv/mm) > 14 23.64 23.64 8.7
Dielectric Constant (at 1MHZ) 9.8 9.9 9.9 9.8
Loss Tangent (x10-4 @1MHZ) 4 1 1 < 1
Volume Resistivity (ohm-m) > 1013 @ 20 Cº; > 3x107 @ 500 Cº > 1014 @ 25 Cº; > 109 @ 500 Cº > 1014 @ 25 Cº; > 1010 @ 500 Cº > 1015 @ 25Cº; 1012 @ 500 Cº
Flexural Strength (N/mm2) >330 593 621 400
Surface Roughness (micron) as fired 0.3 as lapped 0.075 as polished 0.025