FEATURES OF plasma enhanced chemical vapor deposition furnaces
ECM offers two different models of compact batch-type, single or multichambered furnace.They provide high precision semiconductor processing as well as a wide range of operating pressures.
The range of temperatures goes from 200ºC to 1300ºC. They have enough room for up to 25 wafers and high precision components that allow high quality thin film deposition.The machines allow Si, SiC, GaN, sapphire, ceramic, quartz and metal as substrate material. Direct Plasma, Low RF,Pin Mark Free, Color Uniform, Horizontal Wafer Process, Up to 25 wafers per batch, Multiple layers deposition possibilities, In situ Cleaning
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