MAIN FEATURES OF Atomic Layer Deposition EQUIPMENT
ALD process consists of thin film growth by consecutive atomic layers ALD is the most advanced technique in thin film coating due to the precise control of film thickness (nm) it offers. It also provides film uniformity and conformality over any scale.
The films produced by this technique are dense, pinhole-free and defectless, and the conditions at which the process takes place, 1-10 hPa 200-400ºC, are gentle to sensitive substrates.
This company offers solutions for R&D for up to 200mm single wafer with processing temperature 50-500 ºC and Al2SO3, TiO2 or SiO2 among other typical processes. It also has machines for small and large 3D items with similar specifications.