PhotonExport, your supplier of high-grade III-V Wafers. We offer the following III-V Wafers: Gallium Phosphide, Indium Arsenide, Gallium Arsenide, and Indium Phosphide (InP).
Whether you need custom or standard wafers, our III-V Wafers are engineered to meet the precise needs of research and production processes.
III-V Wafers: Gallium Phosphide (GaP) Wafers
Gallium Phosphide (GaP) wafers, with a cubic crystal structure, have a high melting point of 1480°C and a density of 4.13 g/cm³.
These N-type wafers are doped with sulfur, featuring a carrier concentration of 2-8×10¹⁷ cm⁻³ and an Etch Pit Density (EPD) of less than 10⁴, and are available in sizes up to Ø50 using the Vertical Gradient Freeze (VGF) growth method.
Please contact us today for more information or to request your quote.
Indium Arsenide (InAs) Wafers
Indium Arsenide (InAs) wafers feature a cubic crystal structure, with a melting point of 942°C and a density of 5.699 g/cm³.
These N-type wafers, grown using the Vertical Gradient Freeze (VGF) method, are undoped with a carrier concentration of 1-2×10¹⁶ cm⁻³ and an Etch Pit Density (EPD) of less than 5×10⁴ cm⁻², available up to 3 inches in size. For more information or to request a quote, please contact us today.
Gallium Arsenide (GaAs) Wafers
Gallium Arsenide (GaAs) is a synthetically produced inorganic compound of gallium and arsenic, renowned for its semiconductor properties. It is extensively utilized in the electronics industry, particularly in microelectronics, optoelectronics, and microwave technology. Compared to silicon, gallium arsenide offers superior resistance to electromagnetic radiation.
Our wafers are meticulously crafted from crystals using advanced techniques such as Vertical Gradient Freeze (VGF), Liquid Encapsulated Czochralski (LEC), and Horizontal Bridgman (HB) methods. Available doping options include N-type, P-type, or undoped, to suit various electronic applications. For more information or to request a quote, please contact us today.
Indium Phosphide (InP) Wafers
Our premium Indium Phosphide (InP) wafers, crystallized in the efficient face-centered cubic (zincblende) structure, are produced using the advanced Czochralski method. Optimized for high-performance semiconductor applications, these wafers are available with customizable doping options such as zinc, tin, sulfur, or iron to meet your specific technological needs.
We provide Indium Phosphide wafers, in diameters of 2″ and 3″, to cater to your specific research or production requirements. For more details or to request a quote use the button below.